Intel genombrott i transistorns utveckling

Intel Corporation researchers have achieved a significant breakthrough by building the world's smallest and fastest CMOS transistor. This breakthrough will allow Intel within the next five to 10 years to build microprocessors containing more than 400 million transistors, running at 10 gigahertz and operating at less than one volt. The transistors feature structures just 30 nanometers in size and three atomic layers thick.

Scientists expect such powerful microprocessors to allow applications popular in science-fiction stories -- such as instantaneous, real-time voice translation -- to become an everyday reality.

Researchers from Intel Labs are disclosing the details of this advance today in San Francisco at the International Electron Devices Meeting, a technical conference for semiconductor engineers and scientists.

"This breakthrough will allow Intel to continue increasing the performance and reducing the cost of microprocessors well into the future," said Dr. Sunlin Chou, vice president and general manager of Intel's Technology and Manufacturing Group. "As our researchers venture into uncharted areas beyond the previously expected limits of silicon scaling, they find Moore's Law still intact."

Intel researchers were able to build these ultra-small transistors by aggressively reducing all of their dimensions. The gate oxides used to build these transistors are just three atomic layers thick. More than 100,000 of these gates would need to be stacked to achieve the thickness of a sheet of paper. Also significant is that these experimental transistors, while featuring capabilities that are generations beyond the most advanced technologies used in manufacturing today, were built using the same physical structure as in today's computer chips.

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